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Samsung begins mass production of high-performance 128-gigabit 3-bit Multi-level-cell NAND Flash Memory


Samsung has begun mass producing its 128-gigabit (Gb), 3bit multi-level-cell (MLC) NAND memory chip using 10 nanometer (nm)-class process technology this month. The highly advanced chip will enable high-density memory solutions such as embedded NAND storage and solid state drives (SSDs). Samsung’s 128Gb NAND flash is based on a 3bit multi-level-cell design and 10nm-class process technology. It boasts the industry’s highest density as well as the highest performance level of 400 megabits-per-second (mbps) data transfer rate based on the toggle DDR 2.0 interface.

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Utilizing 128Gb NAND flash memory, Samsung will expand its supply of 128-gigabyte (GB) memory cards, which can store as many as sixteen 8GB full HD video files. Samsung now will also increase its production volume of SSDs with densities over 500GBs for wider adoption of SSDs in computer systems, while leading the transition of main storage drives in the notebook market from hard disk drives (HDDs) to SSDs. Demand for high-performance 3bit MLC NAND flash and 128Gb high storage capacities has been rapidly increasing, driving the adoption of SSDs with more than 250GB data storage, led by the Samsung SSD 840 Series.

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