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Panasonic announces Industry’s Smallest Enhancement-Mode 600V GaN Power Transistors Package

Panasonic today announced that it will launch the industry’s smallest enhancement-mode gallium nitride (GaN) power transistors (X-GaNTM) package. The GaN is encapsulated into 8×8 dual-flat no-lead (DFN) surface-mount package. Power transistor is a semiconductor device to control power supply. GaN is one of remarkable semiconductor compounds and when it is applied to transistor, higher switching performance and higher break down voltage is expected than those of silicon (Si) and silicon carbide (4H-SiC). It is possible to mount the package on small area where it is difficult to mount conventionally and it is contribute to the reduction of the power consumption of industrial and consumer electronics equipment.
The GaN power transistors are applied to AC-DC power supply units (PFCs, insulated DC-DC converters), battery charging systems, PV power conditioners and EV inverters more easily. This work is partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan, under the Strategic Development of Energy Conservation Technology Project. Panasonic will ship product samples, 10A type (PGA26E19BV) and 15A type(PGA26E08BV), in July 2015. The products will be exhibited at Power Conversion Intelligent Motion 2015 (PCIM 2015) in Nurnberg, Germany from May 19 to 21, 2015.

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