Canon developing next-generation semiconductor lithography system employing nanoimprint technology
Canon announced today that the Company is developing a next-generation semiconductor lithography system employing nanoimprint technology that makes possible sub-20 nm high-resolution processes. In nanoimprint lithography, a mold is brought into direct contact with the resist material on the substrate surface, a pattern transfer process that enables the accurate transfer of the mold’s pattern and makes possible higher resolution and more uniform results compared with conventional optical lithographic approaches. In addition, unlike optical lithography tools, nanoimprint semiconductor production equipment does not require the use of a light source or high-aperture lens elements, making possible simple configurations and compact designs that enable users to install a cluster of systems for increased productivity.
Compared with conventional optical lithography equipment, nanoimprint lithography delivers greatly reduced production costs for semiconductor devices, responding to the high-level demands of semiconductor manufacturers seeking to reduce CoO for high-resolution semiconductor devices. Canon’s nanoimprint semiconductor lithography system currently under development will initially target memory device manufacturers producing flash memory. In the future, the Company will aim to apply this technology in the production of DRAM and logic devices.