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Samsung Announces High-performance 3-bit NAND Flash Memory Storage for Mass Mobile Device Market

Samsung today announced high-performance mobile memory storage based on Embedded MultiMediaCard (eMMC) 5.0 technology. The new 128 gigabyte (GB), 3-bit NAND-based eMMC 5.0 storage is targeted at the smartphone and tablet mass markets. While flagship smartphones are already transitioning to 128GB memory storage based on Universal Flash Storage (UFS) 2.0 or eMMC 5.1 standards, mid-market smartphones will now be able to increase their storage capacity to 128GB as well. Samsung’s new 3-bit 128GB eMMC 5.0 memory speeds up this transition as the industry’s highest density eMMC 5.0 solution.

The new 128GB eMMC 5.0 delivers 260 megabytes per second (MB/s) for sequential data reading, which is the same level of performance as that of MLC NAND-based eMMC 5.1 memory. For random data read and write operations, it can handle up to 6,000 IOPS (input/output operations per second) and 5,000 IOPS respectively, which is sufficient for supporting high definition video processing and advanced multi-tasking features. These IOPS speeds are approximately four and 10 times faster, respectively, than those of a typical external memory card. With the new 3-bit eMMC 5.0 line-up, Samsung has extended its 3-bit NAND business from SSDs for data centers, servers and PCs to the entire mobile memory storage market.

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