Samsung today announced that its 16-gigabit (Gb) DDR5 DRAM, which utilizes the industry’s most advanced 12 nanometer (nm)-class process technology, has started mass production. Compared to the previous generation, Samsung’s new 12nm-class DDR5 DRAM reduces power consumption by up to 23% while enhancing wafer productivity by up to 20%. Its outstanding power efficiency makes it the ideal solution for global IT companies that want to reduce the energy consumption and carbon footprint of their servers and data centres.
Boasting a maximum speed of 7.2 gigabits per second (Gbps) — translating into speeds that can process two 30GB UHD movies in about a second — Samsung’s 12nm-class DDR5 DRAM lineup will support a growing list of applications including data centers, artificial intelligence, and next-generation computing. Samsung completed its 16-gigabit DDR5 DRAM evaluation for compatibility with AMD last December.
Samsung’s development of 12nm-class process technology was made possible thanks to the use of a new high-κ material that helps increase cell capacitance. High capacitance results in a significant electric potential difference in the data signals, which makes it easier to accurately distinguish them. Samsung’s efforts to lower operating voltage and reduce noise have also helped deliver the optimal solution that customers need. Samsung’s completion of the state-of-the-art manufacturing process reaffirms its leadership in cutting-edge DRAM technology.
