Samsung Electronics Co., Ltd., announced today that it has begun mass producing the industry’s first 1Gigabit (GB) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology. Use of the new process technology is a significant milestone in that it increases production efficiency by 40 percent over the 80nm process technology deployed in DRAM fabrication since early 2006, and offers twice the productivity of 90nm general process technology. In addition to its 60nm process technology innovation, Samsung’s use of metal-insulator metal (MIM) for its capacitors provides enhanced data storage in sub-70nm designs.
The 60nm process is expected to become the mainstream circuit technology for DRAM in 2008. In the first year of market availability alone, 60nm DRAM revenues are expected to reach US $2.3billion worldwide and further increase to US $32 billion by 2009.
