Samsung develops first 40-nanometer class DRAM chip and module with 30 percent power savings
Samsung has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per second) DDR2 SODIMM (small outline DRAM inline memory module) – both to be processed at 40-nm – have been certified in the Intel Platform Validation program for use with the Intel GM45 series Express mobile chipsets. The new 40-nm class process technology will drive further reductions in voltage against a 50-nm class device, which Samsung expects to translate into about a 30 percent power savings. The finer DRAM technology node also delivers an approximately 60 percent increase in productivity over 50-nm class process technology.
Samsung plans to apply its 40-nm class technology to also develop a 2 GB DDR3 device for mass production by the end of 2009. In addition, Samsung expects that its 40-nm process node will mark a significant step toward the development of next generation, ultra-high performance DRAM technologies such as DDR4.