Samsung announced today that it has begun mass producing the industry’s first two gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The monolithic 2Gb chips are energy-efficient solutions for high-density, high-performance memory applications. Each supports a data rate of up to 1.6 gigabits per second (Gbps) at 1.35 volts, up to twice as fast as an 800Mbps 1Gb-based dual-die package. Besides 16GB, 8GB and 4GB RDIMMs for servers, Samsung will produce UDIMMs (unregistered in-line memory modules) for work stations and desktop PCs or SODIMMs (small outline dual in-line memory modules) for notebook PCs of up to 4GBs, using the new chip.
Samsung’s seven-month window between new process technology development and mass production of the new DDR3 (Jan. to Jul. ’09) will allow OEMs to optimize their next-generation systems more quickly. In addition, moving to a 40nm production process will provide around a 60 percent increase in production productivity over use of a 50 nm process.
