Samsung first to mass produce 2-Gigabit DDR3 Using 40nm Class Technology
Samsung announced today that it has begun mass producing the industry’s first two gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The monolithic 2Gb chips are energy-efficient solutions for high-density, high-performance memory applications. Each supports a data rate of up to 1.6 gigabits per second (Gbps) at 1.35 volts, up to twice as fast as an 800Mbps 1Gb-based dual-die package. Besides 16GB, 8GB and 4GB RDIMMs for servers, Samsung will produce UDIMMs (unregistered in-line memory modules) for work stations and desktop PCs or SODIMMs (small outline dual in-line memory modules) for notebook PCs of up to 4GBs, using the new chip.
Samsung’s seven-month window between new process technology development and mass production of the new DDR3 (Jan. to Jul. ’09) will allow OEMs to optimize their next-generation systems more quickly. In addition, moving to a 40nm production process will provide around a 60 percent increase in production productivity over use of a 50 nm process.