SK Hynix announced today that it has developed HBM2E DRAM product with the industry’s highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2. SK Hynix’s HBM2E supports over 460GB (Gigabyte) per second bandwidth based on the 3.6Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). SK Hynix’s HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance.
Unlike commodity DRAM products which take on module package forms and mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few ㎛ units apart, which allows even faster data transfer. Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16GB data capacity. SK Hynix will start volume production of the new chip in 2020.
