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SK Hynix Develops World’s Fastest High Bandwidth Memory HBM2E

SK Hynix announced today that it has developed HBM2E DRAM product with the industry’s highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous HBM2.  SK Hynix’s HBM2E supports over 460GB (Gigabyte) per second bandwidth based on the 3.6Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). SK Hynix’s HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance.

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Unlike commodity DRAM products which take on module package forms and mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few ㎛ units apart, which allows even faster data transfer. Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16GB data capacity. SK Hynix will start volume production of the new chip in 2020.

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