Toshiba today announced the development of BENANDTM a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND removes the burden of ECC from the host processor while minimizing protocol changes and allowing host processors to support leading-edge process NAND flash memory in a timely manner. BENAND embeds an ECC with an error correction of 4 bit per 512 bytes onto Toshiba’s cutting-edge 32nm process SLC NAND flash memory. Package and pin configuration compatibility are assured with General SLC NAND flash, allowing easy replacement of existing products. BENAND’s diverse applications include LCD TVs and digital cameras along with robots and other industrial applications.
Samples of eight BENAND products in two capacities, 4Gigabit and 8Gigabit, will be available from today and mass production will follow from March 2012. Toshiba plans to expand the BENAND lineup to include 24nm process NAND flash memory products after summer 2012. Samples of eight BENAND products in two capacities, 4Gigabit and 8Gigabit is available from today and mass production will follow from March 2012.
