Mitsubishi Electric announced today the launch of a 638-nanometer (nm) wavelength red laser diode offering an output power of 1W, the world’s highest among 638 nm band LDs. The Mitsubishi ML501P73 diode is ideal for pico projectors and other portable display systems that require a high-brightness red light source. At high temperatures, the output power of red LDs with wavelengths shorter than 640 nm was not sufficient for high brightness projector applications. Mitsubishi Electric utilized its unique capabilities in applying window mirror structures and epitaxial growth technology to develop an industry-leading output power of 1W at a 638-nm lasing wavelength.
Laser diodes (LD) deliver higher output while consuming less power than light emitting diodes (LEDs), extending battery life. LDs also enable focus-free operation because optical systems with great depth of field can be used with laser beams. Sample shipments of 638-nanometer (nm) wavelength red laser diode offering an output power of 1W will begin on November 18, 2010.
