Samsung announces industry’s first production of Four Gigabit LPDDR3 Mobile DRAM using 20nm-class Process Technology
Samsung today announced the industry’s first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class process node. The Samsung 4Gb LPDDR3 can transmit data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mbps. This makes it possible to transmit three full HD videos, collectively 17 Gigabytes (GBs) in length, in one second over the new Samsung chip embedded in a mobile device. Samsung’s 20nm-class LPDDR3 mobile DRAM enables seamless display of full HD video on smartphones with five inch-or-larger screens.
In comparison to a 30nm-class LPDDR3 DRAM, the new device generates more than a 30 percent improvement in performance and 20 percent savings in power consumption.While mobile gadgets continue to scale down in height, battery packs have been increasing in size. By adopting Samsung’s 4Gb LPDDR3 mobile DRAM, OEMs can have a 2GB package that includes four of Samsung’s new chips in a single package that meets the memory package height of 0.8 millimeters (mm). Samsung plans to increase production of its advanced 20nm-class mobile DRAM later this year, solidifying its competitiveness as a memory industry leader.