Samsung announced today that it has begun producing the industry’s first four gigabit (Gb), low power double-data-rate 2 (LPDDR2) memory using 20 nanometer (nm) class technology. As large-screen tablets and smartphones equipped with quad-core CPUs lead rapid growth of the mobile market, there is greater demand for more energy-efficient and higher-capacity memory products that guarantee longer battery life, as well as faster processing speed. Samsung’s 20nm-class 4Gb mobile DRAM represents the thinnest, highest-density, and highest-performance mobile memory, which enables ultra-slim mobile designs, as well as superior next-generation systems for both mobile manufacturers and enterprise solution providers.
Furthermore, based on the 4Gb components, Samsung can deliver 2-Gigabyte (GB) solutions that boast razor-thin thickness of 0.8 millimeters (mm) , which stack four 4Gb LPDDR2 chips in a single LPDDR2 package. This new package is approximately 20 percent thinner than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips. Samsung expects the newly introduced 20nm-class 4Gb LPDDR2 will rapidly replace 30nm-class 2Gb-based 1GB LPDDR2 that was in limited supply at the 0.8 mm thickness. The mobile DRAM (dynamic random access memory) chip, which went into mass production last month, will help the market to deliver advanced devices that are faster, lighter and provide longer battery life than today’s mobile devices.