Samsung today announced the industry’s first mass production of its 30-nanometer (nm) class, 32 gigabit (Gb), multi-level-cell (MLC) NAND memory with an asynchronous DDR (double data rate) interface. DDR NAND will sharply raise the read performance of mobile devices requiring high-speeds and large amounts of storage space. Samsung’s new DDR MLC NAND chip, which reads at 133 megabits per second (Mbps), would replace single data rate (SDR) MLC NAND, which has an overall read performance of 40Mbps.
Samsung’s new asynchronous DDR MLC NAND can be used in SSDs for PCs, premium SD memory cards for smartphones, and in Samsung’s proprietary moviNAND memory. In addition, the high-density, high-performance memory is an ideal solution for personal media players (PMPs), MP3 players and car navigation systems (CNS). Samsung began shipping initial production of its DDR NAND to major OEMs at the end of November.
