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Fujitsu Succeeds in World’s First Operation of 100W-Class Amplifiers Employing Carbon Nanotubes for Next-Generation Mobile Base Stations


Fujitsu today announced that, using carbon nanotubes as heat-dissipation material in amplifier transistors, Fujitsu has become the first to achieve the successful operation of high-frequency, high-power (100W-class) flip-chip amplifiers employing carbon nanotubes, for mobile base stations designed for fourth-generation (4G, IMT-Advanced) systems. Fujitsu achieved high frequency, high output, and high amplification in the amplifiers by developing “dual-side heat-dissipation” technology, in which heat is dissipated through both sides of the transistor chip, which is the source of the amplifier’s heat output.


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Fujitsu’s new technology enables the reduction of the transistor chip size to less than two-thirds (2/3) the size of existing transistor chips. Details of this new technology were presented at the IEEE International Symposium on Radio-Frequency Integration Technology 2009 (RFIT 2009) held from December 9 to 11 in Singapore, at which Fujitsu Laboratories was awarded the RFIT 2009 Best Paper for Oral Presentation award.




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