Mitsubishi Electric and Mitsubishi Electric Research Laboratories announced today their development of an ultra-wideband gallium nitride (GaN) Doherty power amplifier for next generation base stations. The new power amplifier is compatible with a world-leading range of frequency bands above 3GHz to cover an operating bandwidth of 600MHz. To help meet a rapid rise in demand for increasing wireless capacity, mobile technologies are shifting to next generation systems that raise capacity by allocating new frequency bands above 3GHz and using multiple frequency bands.
Mitsubishi Electric’s new ultra-wideband GaN Doherty power amplifier uses advanced frequency-compensation circuits with Doherty architecture for enhanced efficiency in a very wide band range. Its efficiency rating of 600MHz above 3GHz is the world’s widest level as of January 12, 2017. The new technology is expected to help reduce the size and energy consumption of next generation wireless base stations.
