Samsung announces New High-performance eight gigabit OneNAND chip
Samsung today announced availability of an eight gigabit (Gb) OneNAND chip that takes advantage of advanced 30 nanometer (nm) class process technology. The 8Gb OneNAND features the reliability of a SLC design and the proven performance of OneNAND, which reads data at 70 megabytes per second (MB/s), more than four times the speed of conventional NAND (17MB/s). These characteristics and a low-voltage design make it a particularly attractive solution for handling the growing amount of code data used with touch screens and other high resolution smartphone features.In addition, by applying advanced 30nm-class process technology, Samsung is able to raise productivity by 40 percent over its previous 40nm-class design.
Samsung OneNAND memory can be used as buffer memory not only for ‘writes’ in the system – thanks to its faster-than-NAND ‘write’ speeds, but also as a buffer for faster, high-performing ‘read’ operations thank to its NOR flash interface. The high-density Samsung OneNAND memory is now sampling with volume production scheduled by the end of this month.