Fujitsu Successfully Triples the Output Power of Gallium-Nitride Transistors
Fujitsu today announced the development of a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band. The GaN HEMT technology can serve as a power amplifier for equipment such as weather radar. To expand the observation range of equipment like radar, it is essential to increase the output power of the transistors used in power amplifiers. With conventional technology, however, applying high voltage could easily damage the crystals that compose a transistor. Therefore, it was technically difficult to increase current and voltage simultaneously, which is required to realize high-output power GaN HEMTs.
Fujitsu and Fujitsu Laboratories have now developed a crystal structure that improves operating voltage by dispersing the applied voltage to the transistor, and thereby prevents crystal damage (patent pending). This technology has enabled Fujitsu to successfully achieve the world’s highest power density at 19.9 watts per millimeter of gate width for GaN HEMT employing indium-aluminum-gallium nitride (InAlGaN) barrier layer. With the developed technology, it is expected that the observation range of the radar will be expanded by 2.3 times, enabling early detection of cumulonimbus clouds that can develop into torrential rainstorms.