Fujitsu today announced the development of a millimeter-waveband power amplifier (PA) using standard 90nm CMOS process technology. Targeting millimeter-wave applications, Fujitsu Labs developed a standard CMOS modeling technology and design techniques to minimize high-frequency signal loss, thereby enabling the development of the world’s first CMOS-based PA that operates at 77GHz. The technology realizes CMOS radio frequency (CMOS RF) front-end circuitry that includes a PA, thereby enabling integration with base band circuitry on a single chip, for use in millimeter-wave automotive radar systems.
The millimeter wave is ideal for measuring with high resolution and accuracy the distance between two points, as well as for high-capacity data transmission. This technology will be presented at the International Solid-State Circuits Conference (ISSCC) 2008 to be held in San Francisco from February 3-7.
