Fujitsu today announced that it has successfully developed the world’s first transmitter/receiver (T/R) module using gallium-nitride (GaN) )high electron mobility transistor (HEMT) technology that features an output of 10 W and that operates in a wide bandwidth range of C-band, X-band, and Ku-band (C-Ku band) radio frequencies over 6-18 GHz. By combining the world’s best performing GaN power amplifier (PA) developed last year with the newly developed GaN low-noise amplifier (LNA), the researchers achieved a compact T/R module that generates a high-output.
This technology makes possible the integration of multiple types of communications equipment—each currently operated at a different frequency range—into a single module, making for the development of smaller, lighter radar equipment and wireless communication systems.