Hynix and Toshiba have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device. Once technology development is successfully completed, the companies intend to cooperate in manufacturing MRAM products in a production joint venture. Toshiba recognizes MRAM as an important next-generation memory technology with the potential to sustain future growth in its semiconductor business. Hynix has a cutting-edge memory technology, most notably in manufacturing process optimization and cost competitiveness. Developing a new technology is always prone to risk. One reason for merging the necessary resources and expertise from Hynix and Toshiba is to minimize risk and to accelerate the pace of MRAM commercialization.
MRAM is a next-generation memory solution that uses magnetic properties to store data. Unlike DRAM, which distinguishes between 0 and 1 by passing an electron through a capacitor, data in MRAM can be determined by measuring the difference in resistance from magnetization on a magnetic tunnel junction (MTJ). Data is written and saved by reorienting the magnetization of a thin magnetic layer in a tunnel magnetoresistance (TMR) element using a spin-polarized current.