Mitsubishi Electric’s 200Gbps EML chip will enable data centers to realize up to 800Gbps/1.6Tbps


Mitsubishi Electric announced today that it has developed a 200Gbps electro-absorption modulator laser diode (EML) chip. The new chip doubles the speed of the company’s existing 100Gbps EML chip thanks to a proprietary hybrid waveguide structure. Support for coarse wavelength division multiplexing of four wavelengths realizes 800Gbps transmission using four chips or 1.6Tbps using eight chips.

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The new chip supports four CWDM wavelengths—1271, 1291, 1311 and 1331nm—similar to the company’s existing 100Gbps products, allowing optical signals of different wavelengths to be multiplexed in a single optical fiber, thereby reducing the number of fibers required. Four chips in one transceiver can achieve 800Gbps and eight chips can achieve 1.6Tbps.

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The greatly improved performance is expected to raise the transmission speed of optical transceivers used in data centers to respond to mushrooming data-traffic demand due to the rapid growth of video distribution services and cloud computing. Mitsubishi Electric will present its new chip at the Optical Fiver Communication Conference and Exhibition 2023.