Panasonic today announced the development of a Gallium Nitride (GaN) -based diode with a new junction structure called “Natural Super Junction”. The new GaN diode with low operating loss is applicable to a variety of consumer and industrial power switching systems. The new junction structure does not require any precise control of the doping concentration in the layers as is necessary for the Si super junction.
Panasonic’s proprietary formation technique of the electrodes over the recessed structure reduces the contact resistance between the electrodes and the current channels, which greatly helps to reduce the on-state resistances. Applications for one hundred and twenty four domestic and eighty international patents have been filed.
