Panasonic today announced the development of Gallium Nitride (GaN) integrated circuits (ICs) for the receiver in future millimeter-wave communication systems. The developed amplifier IC achieved the gain of 22dB at 26GHz which is the world highest value in GaN-based ICs at such high frequencies.The Panasonic GaN IC features integrated microstrip lines which enable very compact 3-stage amplifier on a single chip.
Panasonic’s proprietary metal-insulator- semiconductor (MIS) transistor with crystalline SiN film as the gate insulator achieves low noise figure of 1.4dB. These device technologies enable high gain and low noise receiving ICs for the high frequencies at which the signal intensity is drastically reduced in the air.
