Panasonic today announced the development of a Gallium Nitride (GaN) power transistor with the ultra high breakdown voltage over 10000V. This breakdown voltage is more than 5 times higher than previously reported highest values in GaN power transistors. The new GaN transistor is applicable to high-voltage and low-loss power switching devices.
This new Panasonic GaN power transistor with ultra high breakdown voltage is applicable to high voltage power switching devices for industry and electrical power systems.
