Samsung announced today that it has developed the industry’s first eight gigabit (Gb), low power double data rate 4 (LPDDR4), mobile DRAM. The 8Gb LPDDR4 is fabricated on 20-nanometer (nm) class process technology, and offers 1 gigabyte (GB) on a single die, which is the largest density available for DRAM components today. With four of the 8Gb chips, a single 4GB LPDDR4 package can provide the highest level of performance available today. Samsung’s new high-speed 8Gb LPDDR4 mobile DRAM will provide the highest level of density, performance and energy efficiency for mobile memory applications, enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life .
Samsung’s new 8Gb LPDDR4 uses a Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which was originally proposed by Samsung to JEDEC and has become a standard specification for LPDDR4 DRAM. Based on this new interface, the LPDDR4 chip will enable a data transfer rate per pin of 3,200 megabits per second (Mbps), which is twice that of the 20nm-class LPDDR3 DRAM now in mass production. Overall, the new LPDDR4 interface will provide 50 percent higher performance than the fastest LPDDR3 or DDR3 memory. Also, it consumes approximately 40 percent less energy at 1.1 volts. With the new chip, Samsung will focus on the premium mobile market including large screen UHD smartphones, tablets and ultra-slim notebooks that offer four times the resolution of full-HD imaging, and also on high-performance network systems.
