Toshiba today announced the development of a compact MOS-Varactor simulation model that delivers high level accuracy from DC to the millimeter wave (60 GHz) region. The new compact MOS-Varctor model introduces an original algorithm to express scaling effects and can capture the impacts of parasitic effects that dominate in the 60 GHz region. Measurement parameters from 1MHz to 60 GHz for samples with different cell sizes were used for modeling. In general, it is difficult to express MOS-Varactor with a single model, but this newly developed model fully succeeds.
The new model’s accurate capture of parasitic effects supports realization of low power consumption in RF-CMOS products, and Toshiba will use it a basic technology for developing such chips, key devices of the company’s Analog and Imaging IC Division. The new model was developed in cooperation with Professor Nobuyuki Itoh of Okayama Prefectural University.
