SK hynix has started this month mass production of the 8 Gigabit (Gb) LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology. As the semiconductor industry classifies the 10nm DRAM products, naming them after the alphabets, the 1a technology is the fourth generation, following the first three generations of the 1x, 1y, and 1z.The new product stably runs 4266Mbps, the fastest transfer rate in a standard LPDDR4 mobile DRAM specification, and has reduced power consumption by 20%.
SK hynix expects the 1anm technology to lead to a 25% increase in the number of DRAM chips produced from the same size of a wafer, compared with the previous 1znm node. SK hynix anticipates that the 1anm DRAM will likely help alleviate the supply and demand conditions of the global markets following an increase in DRAM demand globally. The new product stably runs 4266Mbps, the fastest transfer rate in a standard LPDDR4 mobile DRAM specification, and has reduced power consumption by 20%.
This is the first time that SK hynix adopted the EUV (Extreme Ultraviolet) equipment for mass production after proving the stability of the cutting edge lithography technology through partial adoption for its 1ynm DRAM production. SK hynix plans to provide the latest mobile DRAM products to smartphone manufacturers from the second half of 2021. SK hynix will apply its 1anm technology to its DDR5 products, the world’s first next-generation DRAM launched in October 2020, from early next year.
