Mitsubishi Electric has developed a silicon carbide (SiC) power device with what is believed to be the world’s highest power efficiency in a device of its type. The newly-developed unit is designed..
Tag Archives: circuit
Mitsubishi Electric develops world’s first ultra-wideband GaN Doherty power amplifier for next generation wireless base stations
Mitsubishi Electric and Mitsubishi Electric Research Laboratories announced today their development of an ultra-wideband gallium nitride (GaN) Doherty power amplifier for next generation base stations. The new power amplifier is compatible with..