SK hynix announced today that it successfully developed HBM3E, the next-generation of the highest-specification DRAM for AI applications currently available. Customer’s evaluation of samples is underway. A high-value, high-performance memory that vertically..
Tag Archives: DRAM
Samsung today announced that its 16-gigabit (Gb) DDR5 DRAM, which utilizes the industry’s most advanced 12 nanometer (nm)-class process technology, has started mass production. Compared to the previous generation, Samsung’s new 12nm-class..
Samsung today announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD…
SK Hynix today announced that it has developed its first DDR5 DRAM-based CXL (Compute Express Link) memory samples and strengthened its presence in next-generation memory solutions market. The form factor of the..
Samsung today has begun sampling the industry’s first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) DRAM featuring 24-gigabit-per-second (Gbps) processing speeds. Built on Samsung’s third-generation 10-nanometer-class (1z) process using extreme ultraviolet..
Samsung today announced its development of the industry’s first 512-gigabyte (GB) Compute Express Link (CXL) DRAM, taking an important step toward the commercialization of CXL which will enable extremely high memory capacity..
SK hynix announced today that it has developed PIM, a next-generation memory chip with computing capabilities. PIM(Processing In Memory): A next-generation technology that provides a solution for data congestion issues for AI..
Samsung today announced that it has developed the industry’s first 14-nanometer (nm) based 16-gigabit (Gb) Low Power Double Data Rate 5X (LPDDR5X) DRAM. Samsung’s LPDDR5X is a next-generation mobile DRAM designed to..
SK hynix today became the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM. HBM3, the fourth generation of the HBM technology with a combination..
SK hynix has started this month mass production of the 8 Gigabit (Gb) LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology. As the..