SK Hynix today announced that it has developed its first DDR5 DRAM-based CXL (Compute Express Link) memory samples and strengthened its presence in next-generation memory solutions market. The form factor of the..
Tag Archives: DRAM
Samsung today has begun sampling the industry’s first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) DRAM featuring 24-gigabit-per-second (Gbps) processing speeds. Built on Samsung’s third-generation 10-nanometer-class (1z) process using extreme ultraviolet..
Samsung today announced its development of the industry’s first 512-gigabyte (GB) Compute Express Link (CXL) DRAM, taking an important step toward the commercialization of CXL which will enable extremely high memory capacity..
SK hynix announced today that it has developed PIM, a next-generation memory chip with computing capabilities. PIM(Processing In Memory): A next-generation technology that provides a solution for data congestion issues for AI..
Samsung today announced that it has developed the industry’s first 14-nanometer (nm) based 16-gigabit (Gb) Low Power Double Data Rate 5X (LPDDR5X) DRAM. Samsung’s LPDDR5X is a next-generation mobile DRAM designed to..
SK hynix today became the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM. HBM3, the fourth generation of the HBM technology with a combination..
SK hynix has started this month mass production of the 8 Gigabit (Gb) LPDDR4 mobile DRAM based on the 1anm, which is the fourth generation of the 10nm process technology. As the..
Samsung has begun mass producing from today its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash,..
GIGABYTE announces today the latest NVMe M.2 SSD with PCIe 3.0 x4 interface, which offers two capacity options of 1 TB and 512 GB. With the high-quality controller and flash, GIGABYTE M30..
Samsung today announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the..
