Fujitsu will launch services that realize the use of private wireless systems, such as private 5G and private LTE, in order to accelerate digital transformation Japanese customers. Private Wireless Managed Services provides..
Tag Archives: Fujitsu
Fujitsu today announced the development of a facial recognition technology that uses conventional cameras to successfully identify efforts to spoof authentication systems. This includes impersonation attempts in which a person presents a..
Fujitsu and Tokyo Shinagawa Hospital today announced the launch of a joint R&D project for AI technology to support diagnostic imaging via chest CT (Computed Tomography), which represents a promising candidate for..
Fugaku, a supercomputer jointly developed by RIKEN and Fujitsu, was ranked No. 1 in the 58th TOP500 list of the world’s supercomputers. The ranking marks the first time in nine years that..
Fujitsu today announced the development of the world’s first adhesive sheet composed of carbon nanotubes with extremely high thermal conductivity of up to 100 W/mK (watt per meter per Kelvin). Carbon nanotubes..
Fujitsu today announced that it will begin global sales of the PRIMEHPC FX1000 and PRIMEHPC FX700 models from the Fujitsu Supercomputer PRIMEHPC series. The new PRIMEHPC Supercomputers utilize the technology of supercomputer..
Fujitsu today announced the development of new “Content-Aware Computing” technology that can control accuracy while increasing computing speeds. The technology was developed in response to the increasing demand for computing power accompanying..
Fujitsu today announced the development of a technology that draws on mathematical models built with limited data on rainfall and water levels to create flooding predictions for rivers. The solution leverages Fujitsu..
Fujitsu today announced that it has begun delivery of 5G base station products, comprising of Central Unit and Radio Unit to NTT DoCoMo for the commercialization of the fifth generation mobile communications..
Fujitsu today announced the development of a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for..
