Samsung today announced that it has developed the industry’s first 12-layer 3D-TSV (Through Silicon Via) technology. Samsung’s new innovation is considered one of the most challenging packaging technologies for mass production of..
Tag Archives: GB
SK Hynix announced today that it has developed HBM2E DRAM product with the industry’s highest bandwidth. The new HBM2E boasts approximately 50% higher bandwidth and 100% additional capacity compared to the previous..
Samsung today announced that it has begun mass producing the industry’s first 12-gigabit (Gb) LPDDR5 mobile DRAM, which has been optimized for enabling 5G and AI features in future smartphones. Samsung also..
Samsung Begins Mass Production of Industry’s First 256GB Embedded Universal Flash Storage for Automotive Applications
Samsung has begun mass production of a 256-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution with advanced features based on automotive specifications from the JEDEC UFS 3.0 standard, for the first time..
Samsung has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the..
ADATA today launched the UV100F special edition USB Flash drive, designed especially for the upcoming holiday season. The USB 2.0 drive is available in 16GB/32GB capacities and features a red/white design highlighting..
Toshiba today announced the launch of AL14SX Series, new additions to its line-up of enterprise performance hard disk drives (HDD) for mission critical server and storage applications. The AL14SX Series of 15,000RPM..
Samsung today announced that it is now mass producing the industry’s first 256-gigabyte (GB) embedded memory based on the Universal Flash Storage (UFS) 2.0 standard, for next-generation high-end mobile devices. The new..