Samsung has begun mass producing from today its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash,..
Tag Archives: NAND-Flash
GIGABYTE announces today the latest NVMe M.2 SSD with PCIe 3.0 x4 interface, which offers two capacity options of 1 TB and 512 GB. With the high-quality controller and flash, GIGABYTE M30..
SK Hynix today launched the world’s first 96-Layer 512Gb (Gigabit) ‘CTF based 4D (Four-Dimensional) NAND Flash (4D NAND)’ based on its TLC (Triple-Level Cell) arrays, using 3D CTF (Charge Trap Flash) design..
Samsung Receives the Industry’s First Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD
Samsung today announced that it has received the industry’s first Environmental Product Declaration (EPD) certificate for it’s 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD in Korea. The Environmental Product Declaration..
Samsung has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the..
Samsung Mass Produces Industry’s First Application Processor for Wearable Devices Built on 14-Nanometer FinFET Technology
Samsung has begun mass production of the Exynos 7 Dual 7270. It is the first mobile application processor (AP) in the industry designed specifically for wearable devices with 14-nanometer (nm) FinFET process..
Adata today launched the Ultimate SU800 SATA 6Gb/s 3D NAND solid state drive, part of a complete range of SSD offerings that utilize advanced 3D NAND Flash. The Ultimate SU800 embodies the..
Samsung Announces Mass Production of Worlds First 256-Gigabit 3D V-NAND Flash Memory for use in SSDs
Samsung announced today that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use..
Toshiba today announced that it has developed the world’s first 15-nanometer (1 nanometer is 1 / 1,000,000,000 m) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Toshiba..
Samsung announced that it has begun mass producing the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains..