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Samsung’s PRO Endurance microSD card enables up to 16 Years of continuous recording and playback
Samsung today announced its new microSD card, the Samsung PRO Endurance. Uniquely designed to meet the rigorous demands of surveillance cameras, dashboard cameras, doorbell cameras, body cameras and more, the card offers improved endurance and outstanding performance for smooth and reliable continuous capture and playback. Built with Samsung’s highly reliable enterprise-grade NAND flash memory, the…
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MSI Announces New Gen4 PCIe NVMe with 3600 MB/sec Sequential Read and 3000 MB/sec Sequential Write Speeds
MSI today announced the launch of a new Gen4 PCIe NVMe model to its SSD category – SPATIUM M450 PCIe 4.0 NVMe M.2. The latest 3D NAND flash technology deliver the best compromise of performance and endurance for professionals, content creators, and gamers. This new product allows MSI to continue to refine its identity as…
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Samsung Brings Flagship Features to Broader Smartphone Market with Industry’s First LPDDR5 uMCP
Samsung has begun mass producing from today its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash, delivering flagship-level performance to a much broader range of smartphone users. Based on the latest mobile DRAM and NAND interfaces, Samsung’s uMCP can…
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GIGABYTE Announces the Latest M30 Series PCIe 3.0 x4 SSD
GIGABYTE announces today the latest NVMe M.2 SSD with PCIe 3.0 x4 interface, which offers two capacity options of 1 TB and 512 GB. With the high-quality controller and flash, GIGABYTE M30 SSD can reach up to 3500 MB/sec sequential read, and up to 3000 MB/s sequential writes. Moreover, it comes with the DDR3L DRAM,…
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SK Hynix Launches World’s First CTF-based 4D NAND Flash
SK Hynix today launched the world’s first 96-Layer 512Gb (Gigabit) ‘CTF based 4D (Four-Dimensional) NAND Flash (4D NAND)’ based on its TLC (Triple-Level Cell) arrays, using 3D CTF (Charge Trap Flash) design paired with the PUC (Peri. Under Cell) technology. A single 512Gb NAND Flash chip can represent 64GB (Gigabytes) storage. SK Hynix will start…
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Samsung Receives the Industry’s First Environmental Product Declaration Certificate for 512Gb V-NAND and 860 EVO 4TB SSD
Samsung today announced that it has received the industry’s first Environmental Product Declaration (EPD) certificate for it’s 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD in Korea. The Environmental Product Declaration is a national certification system in Korea which recognizes a product’s performance according to seven key environmental metrics including carbon footprint, resource footprint,…
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Samsung Begins Mass Production of Worlds First 512GB eUFS for Next-Generation Mobile Devices
Samsung has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets. The Samsung 512GB eUFS features strong…
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Samsung Mass Produces Industry’s First Application Processor for Wearable Devices Built on 14-Nanometer FinFET Technology
Samsung has begun mass production of the Exynos 7 Dual 7270. It is the first mobile application processor (AP) in the industry designed specifically for wearable devices with 14-nanometer (nm) FinFET process technology. Exynos 7 Dual 7270 is also the first in its class to feature full connectivity and LTE modem integration. Powered by two…
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Adata launches the Ultimate SU800 SATA 6Gb/s 3D NAND SSD in 128GB to 1TB capacities
Adata today launched the Ultimate SU800 SATA 6Gb/s 3D NAND solid state drive, part of a complete range of SSD offerings that utilize advanced 3D NAND Flash. The Ultimate SU800 embodies the 3D NAND generation with higher density, improved performance, and increased reliability when compared to 2D or planar NAND Flash SSDs. ADATA plans to…
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Samsung Announces Mass Production of Worlds First 256-Gigabit 3D V-NAND Flash Memory for use in SSDs
Samsung announced today that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).Samsung’s new 256Gb 3D V-NAND flash doubles the density of conventional 128Gb NAND flash chips. In addition to enabling…
