Samsung today announced its new microSD card, the Samsung PRO Endurance. Uniquely designed to meet the rigorous demands of surveillance cameras, dashboard cameras, doorbell cameras, body cameras and more, the card offers..
Tag Archives: NAND-Flash
MSI today announced the launch of a new Gen4 PCIe NVMe model to its SSD category – SPATIUM M450 PCIe 4.0 NVMe M.2. The latest 3D NAND flash technology deliver the best..
Samsung has begun mass producing from today its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung’s uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash,..
GIGABYTE announces today the latest NVMe M.2 SSD with PCIe 3.0 x4 interface, which offers two capacity options of 1 TB and 512 GB. With the high-quality controller and flash, GIGABYTE M30..
SK Hynix today launched the world’s first 96-Layer 512Gb (Gigabit) ‘CTF based 4D (Four-Dimensional) NAND Flash (4D NAND)’ based on its TLC (Triple-Level Cell) arrays, using 3D CTF (Charge Trap Flash) design..
Samsung today announced that it has received the industry’s first Environmental Product Declaration (EPD) certificate for it’s 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD in Korea. The Environmental Product Declaration..
Samsung has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the..
Samsung has begun mass production of the Exynos 7 Dual 7270. It is the first mobile application processor (AP) in the industry designed specifically for wearable devices with 14-nanometer (nm) FinFET process..
Adata today launched the Ultimate SU800 SATA 6Gb/s 3D NAND solid state drive, part of a complete range of SSD offerings that utilize advanced 3D NAND Flash. The Ultimate SU800 embodies the..
Samsung Announces Mass Production of Worlds First 256-Gigabit 3D V-NAND Flash Memory for use in SSDs
Samsung announced today that it has begun mass producing the industry’s first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use..
