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Samsung Begins Chip Production Using 3nm Process Technology With GAA Architecture
Samsung today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture. Multi-Bridge-Channel FET (MBCFET), Samsung’s GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current…
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Fujitsu Successfully Triples the Output Power of Gallium-Nitride Transistors
Fujitsu today announced the development of a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for transmitters in the microwave band. The GaN HEMT technology can serve as a power amplifier for equipment such as weather radar. To expand…
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Researchers in Japan Develops New Conductive Ink for Electronic Apparel
University of Tokyo researchers have developed a new conductive ink that can be printed on textiles in a single step to form highly conductive and stretchable connections. This new functional ink will enable electronic apparel such as sportswear and underwear incorporating sensing devices for measuring a range of biological indicators such as heart rate and…
