Samsung today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture. Multi-Bridge-Channel FET (MBCFET), Samsung’s GAA technology implemented for the first time ever,..
Fujitsu today announced the development of a crystal structure that both increases current and voltage in gallium-nitride (GaN) high electron mobility transistors (HEMT), effectively tripling the output power of transistors used for..
University of Tokyo researchers have developed a new conductive ink that can be printed on textiles in a single step to form highly conductive and stretchable connections. This new functional ink will..
