Fujitsu today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents. The new Fujitsu flash memory macro is guaranteed to retain program data storage for 20 years, or 100,000 write/erase cycles for data storage, while improving access speeds by 2.5 times to 10 nanoseconds (10 ns), and reducing the required operating current per cell by two-thirds to 9 microamperes (9 µA), compared to Fujitsu’s past technologies. This technology will be implemented in microcontrollers featuring embedded flash memory in automotive, industrial, and consumer electronics applications for which high speed, low current, and high reliability are all priorities, thus contributing to a reduction in the burden on the environment..
