Fujitsu Develops Worlds first 45 nanometer-generation CMOS-based transistor

Fujitsu Laboratories and Fujitsu Microelectronics today announced the development of a CMOS logic process-based high-voltage transistor featuring high breakdown voltage, suitable for power amplifiers used in wireless devices. As a world’s first, Fujitsu developed a 45 nanometer (45nm)-generation CMOS-based transistor capable of handling 10 V power output, thus enabling the transistor to handle high-output requirements necessary for power amplifiers used in WiMAX and other high-frequency applications.

The new technology makes it possible for power amplifiers to be formed on the same die as CMOS logic control circuitry to achieve single-chip integration, thereby making high-performance, low-cost power amplifiers feasible.